Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise
نویسندگان
چکیده
منابع مشابه
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories
This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is de ned as an abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity. RTN signal properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed method considers the measured multi-level R...
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Article history: Available online 30 March 2013
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Resistive random access memory (RRAM) devices (e.g."memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detail...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3691224